Anti-Stokes luminescence in the light of second order perturbation theory

Volume 105, Issue 19, 10 November 2014$4.00

Rupak Bhattacharya^1,a),, Bipul Pal^1,b) and Bhavtosh Bansal^1,c)
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Appl. Phys. Lett. 105, 191102 (2014); http://dx.doi.org/10.1063/1.4901075
Anti-Stokes photoluminescence is measured in high-quality GaAs quantum wells. The primary pathway for interband optical absorption and hence emission under subbandgap photoexcitation is the optical phonon-mediated second-order electric dipole transition. This conclusion is drawn from the remarkable agreement between predictions of second-order perturbation calculation and the measured intensity of anti-Stokes photoluminescence, both as function of the detuning wavelength and temperature. The results are of direct relevance to laser cooling of solids where phonon-assisted upconversion is a necessary condition.
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Received 12 September 2014 Accepted 20 October 2014 Published online 10 November 2014